Galvanically Isolated Dual-Active-Bridge (DAB) Topology
Triple-phase-shift modulation controlling power transfer direction, zero-voltage switching (ZVS) across wide voltage ratios, and 1000V chassis isolation.
Zero-Voltage Switching (ZVS) Optimization
Adaptive duty cycle and phase angle calculation ensures SiC MOSFETs commutate under zero-voltage conditions even when balancing full 800V-to-400V cross-charging.
- Bi-directional power transfer rated up to 150 kW DC.
- Galvanic isolation exceeding 5 kV DC breakdown voltage.
- Automatic voltage normalization between 400V and 800V architectures.
- Efficiency exceeds 98.2% across 20% to 100% load range.
Explore Domain Portfolio